SMBJ20A vs SMBJ20A feature comparison

SMBJ20A General Instrument Corp

Buy Now Datasheet

SMBJ20A Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer GENERAL INSTRUMENT CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 25.5 V 24.5 V
Breakdown Voltage-Min 22.2 V 22.2 V
Clamping Voltage-Max 32.4 V 32.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 20 V 20 V
Reverse Current-Max 5 µA 1 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 14
Rohs Code Yes
Package Description SMB, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 23.35 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Reverse Test Voltage 20 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ20A with alternatives

Compare SMBJ20A with alternatives