SMBTA14
vs
PDTA123YS
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.3 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
30 V
|
50 V
|
| Configuration |
DARLINGTON
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
20000
|
35
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
PNP
|
| Power Dissipation-Max (Abs) |
0.33 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
125 MHz
|
|
| VCEsat-Max |
1.5 V
|
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
TO-92
|
| Pin Count |
|
3
|
| Additional Feature |
|
BUILT IN BIAS RESISTOR RATIO IS 4.5
|
| JEDEC-95 Code |
|
TO-92
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare SMBTA14 with alternatives
Compare PDTA123YS with alternatives