SMMUN2211LT1 vs BCR133E6327 feature comparison

SMMUN2211LT1 onsemi

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BCR133E6327 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer ON SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Part Package Code SOT-23
Package Description CASE 318-08, TO-236, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 260
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Pbfree Code Yes
Samacsys Manufacturer Infineon
Power Dissipation-Max (Abs) 0.2 W
Transition Frequency-Nom (fT) 130 MHz

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