SP0000-82518 vs IPB80N06S2L-06 feature comparison

SP0000-82518 Infineon Technologies AG

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IPB80N06S2L-06 Infineon Technologies AG

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Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 700 mJ 530 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.008 Ω 0.0084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 540 pF
JEDEC-95 Code TO-262AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 300 W 250 W
Pulsed Drain Current-Max (IDM) 320 A 320 A
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SP0000-82518 with alternatives

Compare IPB80N06S2L-06 with alternatives