SP8K1FU6TB vs SP8K1TB feature comparison

SP8K1FU6TB ROHM Semiconductor

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SP8K1TB ROHM Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description , SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Drain Current-Max (ID) 5 A 5 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W 2 W
Surface Mount YES YES
Time@Peak Reflow Temperature-Max (s) 10 10
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code SOT
Pin Count 8
Samacsys Manufacturer ROHM Semiconductor
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.082 Ω
JESD-30 Code R-PDSO-G8
JESD-609 Code e2
Number of Elements 2
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare SP8K1FU6TB with alternatives

Compare SP8K1TB with alternatives