SPB20N60C3ATMA1
vs
SIHP22N60EL-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY INTERTECHNOLOGY INC
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
FLANGE MOUNT, R-PSFM-T3
Pin Count
4
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
15 Weeks
19 Weeks
Samacsys Manufacturer
Infineon
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
690 mJ
286 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
20.7 A
21 A
Drain-source On Resistance-Max
0.19 Ω
0.197 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
62.1 A
45 A
Qualification Status
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare SPB20N60C3ATMA1 with alternatives
Compare SIHP22N60EL-GE3 with alternatives