SPI21N50C3XKSA1 vs SIHB20N50E-GE3 feature comparison

SPI21N50C3XKSA1 Infineon Technologies AG

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SIHB20N50E-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Package Description GREEN, PLASTIC, TO-262, I2PAK-3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 15 Weeks 18 Weeks
Samacsys Manufacturer Infineon Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ 204 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 21 A 19 A
Drain-source On Resistance-Max 0.19 Ω 0.184 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 63 A 42 A
Surface Mount NO YES
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Feedback Cap-Max (Crss) 6 pF
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 179 W
Turn-off Time-Max (toff) 146 ns
Turn-on Time-Max (ton) 88 ns

Compare SPI21N50C3XKSA1 with alternatives

Compare SIHB20N50E-GE3 with alternatives