SPI80N06S08AKSA1
vs
IPB80N06S209XT
feature comparison
Part Life Cycle Code |
Not Recommended
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
GREEN, PLASTIC, TO-262, 3 PIN
|
GREEN, PLASTIC, TO-263, 3 PIN
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
700 mJ
|
370 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
80 A
|
80 A
|
Drain-source On Resistance-Max |
0.008 Ω
|
0.0088 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-263AB
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
320 A
|
320 A
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Case Connection |
|
DRAIN
|
|
|
|
Compare SPI80N06S08AKSA1 with alternatives
Compare IPB80N06S209XT with alternatives