SPI80N06S08AKSA1 vs SPB80N06S08ATMA1 feature comparison

SPI80N06S08AKSA1 Infineon Technologies AG

Buy Now Datasheet

SPB80N06S08ATMA1 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-262, 3 PIN SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 700 mJ 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.008 Ω 0.0077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A 320 A
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection DRAIN
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SPI80N06S08AKSA1 with alternatives

Compare SPB80N06S08ATMA1 with alternatives