SPI80N06S08AKSA1
vs
SPB80N06S08ATMA1
feature comparison
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
GREEN, PLASTIC, TO-262, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
700 mJ
|
700 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
80 A
|
80 A
|
Drain-source On Resistance-Max |
0.008 Ω
|
0.0077 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-263AB
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
320 A
|
320 A
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
HTS Code |
|
8541.29.00.95
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Case Connection |
|
DRAIN
|
JESD-609 Code |
|
e3
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Terminal Finish |
|
Tin (Sn)
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SPI80N06S08AKSA1 with alternatives
Compare SPB80N06S08ATMA1 with alternatives