SPP11N60CFD vs STB11NM60T4 feature comparison

SPP11N60CFD Infineon Technologies AG

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STB11NM60T4 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Part Package Code TO-220AB D2PAK
Package Description FLANGE MOUNT, R-PSFM-T3 D2PAK-3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 340 mJ 350 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 11 A 11 A
Drain-source On Resistance-Max 0.44 Ω 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 160 W
Pulsed Drain Current-Max (IDM) 28 A 44 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin (Sn) Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Factory Lead Time 13 Weeks
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Moisture Sensitivity Level 1

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