SPU08P06P
vs
FQA24N50
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
SIEMENS A G
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
IN-LINE, R-PSIP-T3
|
TO-3PN, 3 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
AVALANCHE RATED
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
500 V
|
| Drain Current-Max (ID) |
8.8 A
|
24 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
0.2 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TO-3PN
|
| Pin Count |
|
3
|
| Avalanche Energy Rating (Eas) |
|
1100 mJ
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
NOT APPLICABLE
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Pulsed Drain Current-Max (IDM) |
|
96 A
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
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