SQM100N04-2M7_GE3
vs
SQM110N04-03-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY SILICONIX
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
20 Weeks
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Avalanche Energy Rating (Eas) |
245 mJ
|
211 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
40 V
|
40 V
|
| Drain Current-Max (ID) |
100 A
|
110 A
|
| Drain-source On Resistance-Max |
0.0027 Ω
|
0.0028 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
400 A
|
440 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
D2PAK
|
| Pin Count |
|
4
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
375 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare SQM100N04-2M7_GE3 with alternatives
Compare SQM110N04-03-GE3 with alternatives