SS5620
vs
BAS21,215
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
NEXPERIA
|
| Package Description |
E-LALF-W2
|
|
| Pin Count |
2
|
3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.70
|
| Additional Feature |
HIGH RELIABILITY, METALLURGICALLY BONDED
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
E-LALF-W2
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Output Current-Max |
1 A
|
0.2 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ELLIPTICAL
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500
|
IEC-60134
|
| Rep Pk Reverse Voltage-Max |
800 V
|
250 V
|
| Reverse Recovery Time-Max |
2 µs
|
0.05 µs
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
AXIAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Base Number Matches |
1
|
2
|
| Part Package Code |
|
TO-236
|
| Manufacturer Package Code |
|
SOT23
|
| Date Of Intro |
|
1991-04-01
|
| Samacsys Manufacturer |
|
Nexperia
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max |
|
0.25 W
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare SS5620 with alternatives
Compare BAS21,215 with alternatives