SSM6N48FU,RF(D vs SSM6N15AFU,LF(D feature comparison

SSM6N48FU,RF(D Toshiba America Electronic Components

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SSM6N15AFU,LF(D Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 0.1 A 0.1 A
Drain-source On Resistance-Max 5.4 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Number of Elements 2 2
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Feedback Cap-Max (Crss) 6.5 pF
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.3 W

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