SSM6N48FU,RF(D
vs
SSM6N15AFU,LF(D
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
Package Description |
SMALL OUTLINE, R-PDSO-G6
|
SMALL OUTLINE, R-PDSO-G6
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
0.1 A
|
0.1 A
|
Drain-source On Resistance-Max |
5.4 Ω
|
6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
Number of Elements |
2
|
2
|
Number of Terminals |
6
|
6
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Feedback Cap-Max (Crss) |
|
6.5 pF
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
0.3 W
|
|
|
|
Compare SSM6N48FU,RF(D with alternatives
Compare SSM6N15AFU,LF(D with alternatives