STB85NF55T4 vs SPB80N06S08ATMA1 feature comparison

STB85NF55T4 STMicroelectronics

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SPB80N06S08ATMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description TO-263, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 39 Weeks
Samacsys Manufacturer STMicroelectronics Infineon
Avalanche Energy Rating (Eas) 980 mJ 700 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.008 Ω 0.0077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 320 A 320 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.29.00.95

Compare STB85NF55T4 with alternatives

Compare SPB80N06S08ATMA1 with alternatives