STB8NM60N vs IPP45N06S4L-08 feature comparison

STB8NM60N STMicroelectronics

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IPP45N06S4L-08 Infineon Technologies AG

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Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code D2PAK TO-220AB
Package Description ROHS COMPLIANT, TO-263, D2PAK-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 4 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 200 mJ 97 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 60 V
Drain Current-Max (ID) 7 A 45 A
Drain-source On Resistance-Max 0.65 Ω 0.0079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W 71 W
Pulsed Drain Current-Max (IDM) 28 A 180 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Samacsys Manufacturer Infineon
Case Connection DRAIN

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