STD60N10 vs BUK455-100A feature comparison

STD60N10 STMicroelectronics

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BUK455-100A NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 60 A 26 A
Drain-source On Resistance-Max 0.0195 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 125 W
Pulsed Drain Current-Max (IDM) 240 A 104 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Rohs Code No
Part Package Code TO-220AB
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-220AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 125 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Turn-off Time-Max (toff) 240 ns
Turn-on Time-Max (ton) 70 ns

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