STH9NA80FI vs PHB6N50E feature comparison

STH9NA80FI STMicroelectronics

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PHB6N50E Philips Semiconductors

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Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer STMICROELECTRONICS PHILIPS SEMICONDUCTORS
Package Description ISOWATT218, 3 PIN ,
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 415 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 5.9 A 5.9 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 80 W 125 W
Pulsed Drain Current-Max (IDM) 36.4 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 1
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)

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