STH9NA80FI
vs
PHD3055L
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
PHILIPS SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
800 V
|
|
| Drain Current-Max (ID) |
5.9 A
|
12 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
No
|
| Package Description |
|
,
|
| ECCN Code |
|
EAR99
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
50 W
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|