STP16NB25 vs IRF644 feature comparison

STP16NB25 STMicroelectronics

Buy Now Datasheet

IRF644 Rochester Electronics LLC

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS ROCHESTER ELECTRONICS LLC
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 250 mJ 550 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 250 V
Drain Current-Max (ID) 16 A 14 A
Drain-source On Resistance-Max 0.28 Ω 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 64 A 56 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Case Connection DRAIN

Compare STP16NB25 with alternatives

Compare IRF644 with alternatives