STP80NF55-06 vs SPB20N60C3 feature comparison

STP80NF55-06 STMicroelectronics

Buy Now Datasheet

SPB20N60C3 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB D2PAK
Package Description ROHS COMPLIANT, TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer STMicroelectronics Infineon
Avalanche Energy Rating (Eas) 1300 mJ 690 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 600 V
Drain Current-Max (ID) 80 A 20.7 A
Drain-source On Resistance-Max 0.0065 Ω 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 210 W 208 W
Pulsed Drain Current-Max (IDM) 320 A 62.1 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Matte Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C

Compare STP80NF55-06 with alternatives

Compare SPB20N60C3 with alternatives