STW28N60DM2 vs TK20G60W feature comparison

STW28N60DM2 STMicroelectronics

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TK20G60W Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS TOSHIBA CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
JESD-609 Code e3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PSSO-G2
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.155 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 165 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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