STW28N60DM2
vs
VP1116N5
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
16 Weeks
|
|
| Samacsys Manufacturer |
STMicroelectronics
|
|
| JESD-609 Code |
e3
|
e0
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
TO-220, 3 PIN
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
160 V
|
| Drain Current-Max (ID) |
|
1.8 A
|
| Drain-source On Resistance-Max |
|
5 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
|
TO-220AB
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Polarity/Channel Type |
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
45 W
|
| Pulsed Drain Current-Max (IDM) |
|
7 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare STW28N60DM2 with alternatives
Compare VP1116N5 with alternatives