STW9NA80
vs
SSH17N60A
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
800 V
|
600 V
|
| Drain Current-Max (ID) |
9.1 A
|
17 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
TO-3P
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
|
3
|
| Avalanche Energy Rating (Eas) |
|
1103 mJ
|
| Drain-source On Resistance-Max |
|
0.45 Ω
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation-Max (Abs) |
|
278 W
|
| Pulsed Drain Current-Max (IDM) |
|
68 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
|
|
|
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