SUD50N02-06P-E3 vs NTD110N02R-001G feature comparison

SUD50N02-06P-E3 Vishay Siliconix

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NTD110N02R-001G onsemi

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Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SILICONIX ONSEMI
Part Package Code TO-252 DPAK INSERTION MOUNT
Package Description SMALL OUTLINE, R-PSSO-G2 LEAD FREE, CASE 369D-01, DPAK-3
Pin Count 4 4
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay onsemi
Avalanche Energy Rating (Eas) 101 mJ 120 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 24 V
Drain Current-Max (ID) 26 A 12.5 A
Drain-source On Resistance-Max 0.006 Ω 0.0062 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 65 W 110 W
Pulsed Drain Current-Max (IDM) 100 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Manufacturer Package Code 369
Factory Lead Time 4 Weeks

Compare SUD50N02-06P-E3 with alternatives

Compare NTD110N02R-001G with alternatives