SUD50P10-43L-GE3 vs SUD50P10-43L-E3 feature comparison

SUD50P10-43L-GE3 Vishay Intertechnologies

Buy Now Datasheet

SUD50P10-43L-E3 Vishay Intertechnologies

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description DPAK-3/2 ROHS COMPLIANT PACKAGE-3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks 16 Weeks, 3 Days
Samacsys Manufacturer Vishay Vishay
Avalanche Energy Rating (Eas) 61 mJ 61 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 36.4 A 9.2 A
Drain-source On Resistance-Max 0.043 Ω 0.043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A 40 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 136 W
Qualification Status Not Qualified
Transistor Application SWITCHING