SUM110P06-08L
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
|
| Package Description |
TO-263, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
|
| Avalanche Energy Rating (Eas) |
211 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
110 A
|
|
| Drain-source On Resistance-Max |
0.008 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
P-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
272 W
|
|
| Pulsed Drain Current-Max (IDM) |
200 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
|
|
|
|