SUP85N10-10-E3 vs IRF2807PBF feature comparison

SUP85N10-10-E3 Vishay Intertechnologies

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IRF2807PBF Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT PACKAGE-3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks 4 Weeks
Samacsys Manufacturer Vishay Infineon
Avalanche Energy Rating (Eas) 280 mJ 340 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 75 V
Drain Current-Max (ID) 85 A 75 A
Drain-source On Resistance-Max 0.0105 Ω 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 250 W 230 W
Pulsed Drain Current-Max (IDM) 240 A 280 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

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