TK100L60W,VQ
vs
APT94N60L2C3G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TOSHIBA CORP
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Toshiba
|
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
100 A
|
94 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
797 W
|
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
38 Weeks
|
| Additional Feature |
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
|
1800 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
600 V
|
| Drain-source On Resistance-Max |
|
0.035 Ω
|
| JESD-30 Code |
|
R-PSIP-T3
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Pulsed Drain Current-Max (IDM) |
|
282 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare TK100L60W,VQ with alternatives
Compare APT94N60L2C3G with alternatives