TK100L60W,VQ
vs
APT94N60L2C3G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
TOSHIBA CORP
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Toshiba
|
Microsemi Corporation
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
100 A
|
94 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
797 W
|
|
Surface Mount |
NO
|
NO
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-264MA
|
Package Description |
|
TO-264, 3 PIN
|
Pin Count |
|
3
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
1800 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
600 V
|
Drain-source On Resistance-Max |
|
0.035 Ω
|
JESD-30 Code |
|
R-PSIP-T3
|
JESD-609 Code |
|
e3
|
Number of Terminals |
|
3
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
IN-LINE
|
Pulsed Drain Current-Max (IDM) |
|
282 A
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
TIN
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Position |
|
SINGLE
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare TK100L60W,VQ with alternatives
Compare APT94N60L2C3G with alternatives