TK100L60W,VQ
vs
APT94N65LC6
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Toshiba
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
100 A
|
95 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
797 W
|
833 W
|
Surface Mount |
NO
|
NO
|
Base Number Matches |
1
|
1
|
Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
Avalanche Energy Rating (Eas) |
|
1160 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
650 V
|
Drain-source On Resistance-Max |
|
0.035 Ω
|
JEDEC-95 Code |
|
TO-264AA
|
JESD-30 Code |
|
R-PSFM-T3
|
Number of Terminals |
|
3
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
FLANGE MOUNT
|
Pulsed Drain Current-Max (IDM) |
|
282 A
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Position |
|
SINGLE
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare TK100L60W,VQ with alternatives
Compare APT94N65LC6 with alternatives