TK20C60W
vs
SMP2P20
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
End Of Life
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
VISHAY SILICONIX
|
| Package Description |
IN-LINE, R-PSIP-T3
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
200 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
600 V
|
|
| Drain Current-Max (ID) |
20 A
|
|
| Drain-source On Resistance-Max |
0.155 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-PSIP-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
165 W
|
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.29.00.95
|
|
|
|
Compare TK20C60W with alternatives
Compare SMP2P20 with alternatives