TK20N60W5 vs IPP80N06S2L-11 feature comparison

TK20N60W5 Toshiba America Electronic Components

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IPP80N06S2L-11 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 53 Weeks, 1 Day
Avalanche Energy Rating (Eas) 200 mJ 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 55 V
Drain Current-Max (ID) 20 A 80 A
Drain-source On Resistance-Max 0.175 Ω 0.0147 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A 320 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Pbfree Code Yes
Part Package Code TO-220AB
Pin Count 3
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 158 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

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