TK56E12N1
vs
IPB100N12S305ATMA1
feature comparison
| Part Life Cycle Code |
Active
|
Not Recommended
|
| Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Toshiba
|
Infineon
|
| Avalanche Energy Rating (Eas) |
110 mJ
|
1445 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
120 V
|
120 V
|
| Drain Current-Max (ID) |
100 A
|
100 A
|
| Drain-source On Resistance-Max |
0.007 Ω
|
0.0048 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
TO-263AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
168 W
|
300 W
|
| Pulsed Drain Current-Max (IDM) |
219 A
|
400 A
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
52 Weeks
|
| Feedback Cap-Max (Crss) |
|
330 pF
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare TK56E12N1 with alternatives
Compare IPB100N12S305ATMA1 with alternatives