TN1215-800B-TR vs 2N6399 feature comparison

TN1215-800B-TR STMicroelectronics

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2N6399 Digitron Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS DIGITRON SEMICONDUCTORS
Part Package Code TO-252
Package Description DPAK-3
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Factory Lead Time 15 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection ANODE ANODE
Configuration SINGLE SINGLE
Critical Rate of Rise of Off-State Voltage-Min 200 V/us
DC Gate Trigger Current-Max 0.2 mA 30 mA
DC Gate Trigger Voltage-Max 1.3 V 1.5 V
Holding Current-Max 5 mA 50 mA
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e0
Leakage Current-Max 2 mA
Moisture Sensitivity Level 1
Non-Repetitive Pk On-state Cur 115 A 100 A
Number of Elements 1 1
Number of Terminals 2 3
On-state Current-Max 8000 A
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -40 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
RMS On-state Current-Max 12 A 12 A
Repetitive Peak Off-state Voltage 800 V 800 V
Repetitive Peak Reverse Voltage 800 V 800 V
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Trigger Device Type SCR SCR
Base Number Matches 1 10
Circuit Commutated Turn-off Time-Nom 15 µs
JEDEC-95 Code TO-220AB
Repetitive Peak Off-state Leakage Current-Max 10 µA

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