TN5325N3-G
vs
VP2206N2
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
SUPERTEX INC
|
MICROCHIP TECHNOLOGY INC
|
Part Package Code |
TO-92
|
|
Package Description |
CYLINDRICAL, O-PBCY-T3
|
GREEN TO-39, 3 PIN
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
|
HIGH INPUT IMPEDANCE
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
250 V
|
60 V
|
Drain Current-Max (ID) |
0.215 A
|
0.75 A
|
Drain-source On Resistance-Max |
7 Ω
|
0.9 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
23 pF
|
40 pF
|
JEDEC-95 Code |
TO-92
|
TO-39
|
JESD-30 Code |
O-PBCY-T3
|
O-MBCY-W3
|
JESD-609 Code |
e3
|
e4
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
NICKEL GOLD
|
Terminal Form |
THROUGH-HOLE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
HTS Code |
|
8541.29.00.95
|
Factory Lead Time |
|
6 Weeks
|
Samacsys Manufacturer |
|
Microchip
|
Case Connection |
|
DRAIN
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
6 W
|
Pulsed Drain Current-Max (IDM) |
|
8 A
|
Turn-off Time-Max (toff) |
|
100 ns
|
Turn-on Time-Max (ton) |
|
40 ns
|
|
|
|
Compare TN5325N3-G with alternatives
Compare VP2206N2 with alternatives