TPD4E02B04DQAR vs HSP061-4M10 feature comparison

TPD4E02B04DQAR Texas Instruments

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HSP061-4M10 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TEXAS INSTRUMENTS INC STMICROELECTRONICS
Package Description USON-10
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.50
Samacsys Manufacturer Texas Instruments STMicroelectronics
Breakdown Voltage-Max 7.5 V
Breakdown Voltage-Min 5.5 V 6 V
Breakdown Voltage-Nom 6.4 V 6 V
Clamping Voltage-Max 6.6 V 15 V
Configuration COMMON ANODE, 4 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-N10 R-PDSO-N10
JESD-609 Code e4
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 17 W 15 W
Number of Elements 4 1
Number of Terminals 10 10
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -40 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5 IEC-61000-4-2; MIL-STD-883G
Rep Pk Reverse Voltage-Max 3.6 V
Reverse Current-Max 0.01 µA 0.07 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 2
Factory Lead Time 15 Weeks
Reverse Test Voltage 3 V

Compare TPD4E02B04DQAR with alternatives

Compare HSP061-4M10 with alternatives