TPD4E05U06DQAR vs ESD9LFN5.0-H feature comparison

TPD4E05U06DQAR Texas Instruments

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ESD9LFN5.0-H Formosa Microsemi Co Ltd

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TEXAS INSTRUMENTS INC FORMOSA MICROSEMI CO LTD
Package Description USON-10 R-PDSO-N2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.50
Samacsys Manufacturer Texas Instruments
Additional Feature ULTRA LOW CAPACITANCE
Breakdown Voltage-Max 8.5 V
Breakdown Voltage-Min 6.5 V 6 V
Breakdown Voltage-Nom 7.5 V
Clamping Voltage-Max 10 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-N10 R-PDSO-N2
JESD-609 Code e4
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 40 W 40 W
Number of Elements 1 1
Number of Terminals 10 2
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -40 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 5.5 V 5 V
Reverse Current-Max 0.01 µA
Reverse Test Voltage 2.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1

Compare TPD4E05U06DQAR with alternatives

Compare ESD9LFN5.0-H with alternatives