UMD9NT2R vs MUN5314DW1T1G feature comparison

UMD9NT2R ROHM Semiconductor

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MUN5314DW1T1G onsemi

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Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD ONSEMI
Part Package Code SC-88 SC-88/SC70-6/SOT-363 6 LEAD
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6 6
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO 4.7
Collector Current-Max (IC) 0.07 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 80
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e2 e3
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN AND PNP NPN AND PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Copper (Sn/Cu) Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 1
Manufacturer Package Code 419B-02
Factory Lead Time 55 Weeks, 2 Days
Samacsys Manufacturer onsemi
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 0.15 W

Compare UMD9NT2R with alternatives

Compare MUN5314DW1T1G with alternatives