UMP11NTR vs HN1D01FUTE85L feature comparison

UMP11NTR ROHM Semiconductor

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HN1D01FUTE85L Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD TOSHIBA CORP
Package Description SC-88, SOT-363, 6 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Date Of Intro 1994-03-01
Additional Feature HIGH RELIABILITY
Configuration 2 BANKS, COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.2 V
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e2
Non-rep Pk Forward Current-Max 4 A 2 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 6 6
Operating Temperature-Max 150 °C 125 °C
Output Current-Max 0.1 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.2 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 80 V 85 V
Reverse Current-Max 0.1 µA 0.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 70 V 80 V
Surface Mount YES YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 1 1
Application ULTRA FAST RECOVERY

Compare UMP11NTR with alternatives

Compare HN1D01FUTE85L with alternatives