VN0606M
vs
2N6659
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
0.37 A
|
2 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
6.25 W
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
4
|
20
|
| Package Description |
|
TO-39, 3 PIN
|
| DS Breakdown Voltage-Min |
|
35 V
|
| Drain-source On Resistance-Max |
|
1.8 Ω
|
| Feedback Cap-Max (Crss) |
|
10 pF
|
| JEDEC-95 Code |
|
TO-205AD
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Terminals |
|
3
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Pulsed Drain Current-Max (IDM) |
|
3 A
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
5 ns
|
| Turn-on Time-Max (ton) |
|
5 ns
|
|
|
|