VQ1000J
vs
VQ1001P
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
SILICONIX INC
|
SUPERTEX INC
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
,
|
IN-LINE, R-CDIP-T14
|
| Pin Count |
14
|
14
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Drain Current-Max (ID) |
0.225 A
|
0.85 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e0
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2 W
|
2 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Base Number Matches |
1
|
2
|
| Configuration |
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain-source On Resistance-Max |
|
1 Ω
|
| Feedback Cap-Max (Crss) |
|
35 pF
|
| JESD-30 Code |
|
R-CDIP-T14
|
| Number of Elements |
|
4
|
| Number of Terminals |
|
14
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Pulsed Drain Current-Max (IDM) |
|
3 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
30 ns
|
| Turn-on Time-Max (ton) |
|
30 ns
|
|
|
|
Compare VQ1000J with alternatives
Compare VQ1001P with alternatives