VQ1000P
vs
VQ1001P
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
FAST SWITCHING, LOGIC LEVEL COMPATIBLE
|
|
| Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
0.225 A
|
0.85 A
|
| Drain-source On Resistance-Max |
5.5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T14
|
|
| Number of Elements |
4
|
|
| Number of Terminals |
14
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
1 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
4
|
| Rohs Code |
|
No
|
| Package Description |
|
,
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
2 W
|
|
|
|
Compare VQ1000P with alternatives
Compare VQ1001P with alternatives