ZVN2106ASTOA
vs
BS170
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
ZETEX PLC
|
TOPAZ SEMICONDUCTOR
|
Package Description |
IN-LINE, R-PSIP-W3
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
60 V
|
|
Drain Current-Max (ID) |
0.45 A
|
0.5 A
|
Drain-source On Resistance-Max |
2 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-W3
|
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
200 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
IN-LINE
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
WIRE
|
|
Terminal Position |
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s) |
10
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
2
|
29
|
Power Dissipation-Max (Abs) |
|
0.83 W
|
|
|
|
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