Part Details for 19N10G-TQ2-T by Unisonic Technologies Co Ltd
Overview of 19N10G-TQ2-T by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 19N10G-TQ2-T
19N10G-TQ2-T CAD Models
19N10G-TQ2-T Part Data Attributes
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19N10G-TQ2-T
Unisonic Technologies Co Ltd
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Datasheet
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19N10G-TQ2-T
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 220 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 15.6 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 62.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 19N10G-TQ2-T
This table gives cross-reference parts and alternative options found for 19N10G-TQ2-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 19N10G-TQ2-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQU19N10L | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | 19N10G-TQ2-T vs FQU19N10L |
19N10G-TQ2-R | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10G-TQ2-R |
19N10G-TA3-T | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10G-TA3-T |
19N10G-TM3-T | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10G-TM3-T |
19N10G-TN3-R | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10G-TN3-R |
19N10L-T3P-T | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10L-T3P-T |
19N10L-TM3-T | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10L-TM3-T |
19N10L-TQ2-R | Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | 19N10G-TQ2-T vs 19N10L-TQ2-R |