Part Details for 1MB10-120 by Fuji Electric Co Ltd
Overview of 1MB10-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 1MB10-120
1MB10-120 CAD Models
1MB10-120 Part Data Attributes:
|
|
1MB10-120
Fuji Electric Co Ltd
Buy Now
Datasheet
|
Compare Parts:
1MB10-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
| Part Package Code | TO-3P | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 16 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1500 ns | |
| Turn-on Time-Nom (ton) | 1200 ns |
Alternate Parts for 1MB10-120
This table gives cross-reference parts and alternative options found for 1MB10-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MB10-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | 1MB10-120 vs SGP5N60RUFD |
| GT25Q101 | TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MB10-120 vs GT25Q101 |
| HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | 1MB10-120 vs HGT1S12N60B3S9A |
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | 1MB10-120 vs HGTP20N60C3R |
| IRG4BC20FD-STRL | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | 1MB10-120 vs IRG4BC20FD-STRL |
| IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | 1MB10-120 vs IXGH36N60A3D4 |
| IRGPS40B120U | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN | Infineon Technologies AG | 1MB10-120 vs IRGPS40B120U |
| SGP5N60RUF | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | 1MB10-120 vs SGP5N60RUF |
| IRG4PC40UD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | 1MB10-120 vs IRG4PC40UD |
| IXSH10N120A | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | 1MB10-120 vs IXSH10N120A |