Transistors
1MBI300N-120
Fuji Electric Co Ltd
Description: Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN

Overview of 1MBI300N-120 by Fuji Electric Co Ltd

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for 1MBI300N-120 by Fuji Electric Co Ltd
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Part Data Attributes for 1MBI300N-120 by Fuji Electric Co Ltd

1MBI300N-120
Fuji Electric Co Ltd
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
COLLMER SEMICONDUCTOR INC
Part Package Code
MODULE
Package Description
FLANGE MOUNT, R-XUFM-X4
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW SATURATION VOLTAGE
Collector Current-Max (IC)
300 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE WITH BUILT-IN DIODE AND CURRENT LIMITING CIRCUIT
JESD-30 Code
R-XUFM-X4
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
950 ns
Turn-on Time-Nom (ton)
650 ns
Want to compare parts?
  1. 1MBI300N-120
    Fuji Electric Co Ltd
    Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
    VS

Alternate Parts for 1MBI300N-120

This table gives cross-reference parts and alternative options found for 1MBI300N-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI300N-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MG300N1US1 TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300N-120 vs MG300N1US1
2MBI150NB-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd 1MBI300N-120 vs 2MBI150NB-120
CM600HA-24H Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel Mitsubishi Electric 1MBI300N-120 vs CM600HA-24H
MG100Q2YS50 TRANSISTOR IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300N-120 vs MG100Q2YS50
MG300Q1US2 TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300N-120 vs MG300Q1US2
CM150DU-24H Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors 1MBI300N-120 vs CM150DU-24H
1MBI200S-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd 1MBI300N-120 vs 1MBI200S-120
CM150DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric 1MBI300N-120 vs CM150DY-24T
MG500Q1US1 TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300N-120 vs MG500Q1US1
MG100Q2YS40 TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI300N-120 vs MG100Q2YS40

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