Part Details for 1N4448WSR9G by Taiwan Semiconductor
Overview of 1N4448WSR9G by Taiwan Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 1N4448WSR9G
1N4448WSR9G CAD Models
1N4448WSR9G Part Data Attributes
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1N4448WSR9G
Taiwan Semiconductor
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Datasheet
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1N4448WSR9G
Taiwan Semiconductor
Rectifier Diode,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.70 | |
| Additional Feature | LOW POWER LOSS | |
| Application | EFFICIENCY | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1 V | |
| JESD-30 Code | R-PDSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 0.15 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Power Dissipation-Max | 0.2 W | |
| Rep Pk Reverse Voltage-Max | 100 V | |
| Reverse Current-Max | 5 µA | |
| Reverse Recovery Time-Max | 0.004 µs | |
| Reverse Test Voltage | 75 V | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL |
Alternate Parts for 1N4448WSR9G
This table gives cross-reference parts and alternative options found for 1N4448WSR9G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N4448WSR9G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMBD4148TS_R2_10001 Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 | PanJit Semiconductor | 1N4448WSR9G vs MMBD4148TS_R2_10001 |
| 1N4448WRPG Diodes | SIGNAL DIODE | Taiwan Semiconductor Manufacturing Company Limited | 1N4448WSR9G vs 1N4448WRPG |
| LBAT46T1G Diodes | Rectifier Diode, Schottky, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 | LRC Leshan Radio Co Ltd | 1N4448WSR9G vs LBAT46T1G |
| 1N4148WTF2 Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, | Yangzhou Yangjie Electronics Co Ltd | 1N4448WSR9G vs 1N4148WTF2 |
| KDS4148U Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, USC, 2 PIN | KEC | 1N4448WSR9G vs KDS4148U |
| 1N914BWSRRG Diodes | 0.15A, 100V, SILICON, SIGNAL DIODE, GREEN, PLASTIC PACKAGE-2 | Taiwan Semiconductor Manufacturing Company Limited | 1N4448WSR9G vs 1N914BWSRRG |
| BAV16WS-TH-WS Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2 | Willas Electronic Corp | 1N4448WSR9G vs BAV16WS-TH-WS |
| MMBD4448TS_R1_00001 Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2 | PanJit Semiconductor | 1N4448WSR9G vs MMBD4448TS_R1_00001 |
| MMBD4148F2 Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, | Yangzhou Yangjie Electronics Co Ltd | 1N4448WSR9G vs MMBD4148F2 |
| 1N4448W-AU_R2_000A1 Diodes | Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2 | PanJit Semiconductor | 1N4448WSR9G vs 1N4448W-AU_R2_000A1 |