Datasheets
1EDI60N12AF by: Infineon Technologies AG

Half Bridge Based MOSFET Driver

Part Details for 1EDI60N12AF by Infineon Technologies AG

Results Overview of 1EDI60N12AF by Infineon Technologies AG

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1EDI60N12AF Information

1EDI60N12AF by Infineon Technologies AG is an MOSFET Driver.
MOSFET Drivers are under the broader part category of Drivers And Interfaces.

A driver controls the current or voltage delivered to components like LCDs or motors, while an interface component connects systems for data transfer and control. Read more about Drivers And Interfaces on our Drivers And Interfaces part category page.

Price & Stock for 1EDI60N12AF

Part # Distributor Description Stock Price Buy
CHIPMALL.COM LIMITED SO-8 Gate Drivers ROHS 715
  • 1 $1.4368
  • 10 $1.2167
  • 30 $1.0961
  • 100 $0.8911
  • 500 $0.8308
  • 1,000 $0.8036
$0.8036 / $1.4368 Buy Now
LCSC SO-8 Gate Drivers ROHS 1900
  • 1 $1.4967
  • 10 $1.2674
  • 30 $1.1418
  • 100 $0.9282
  • 500 $0.8654
  • 1,000 $0.8371
$0.8371 / $1.4967 Buy Now
Wuhan P&S 1200V,6A,1-Ch Isolated MOSFET Driver Min Qty: 1 2
  • 1 $2.2800
  • 100 $1.9000
  • 500 $1.6700
  • 1,000 $1.6300
$1.6300 / $2.2800 Buy Now

Part Details for 1EDI60N12AF

1EDI60N12AF CAD Models

1EDI60N12AF Part Data Attributes

1EDI60N12AF Infineon Technologies AG
Buy Now Datasheet
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1EDI60N12AF Infineon Technologies AG Half Bridge Based MOSFET Driver
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.39.00.01
Samacsys Manufacturer Infineon
High Side Driver NO
Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Length 4.9 mm
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 8
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Output Peak Current Limit-Nom 10 A
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.75 mm
Supply Voltage-Max 17 V
Supply Voltage-Min 3.1 V
Supply Voltage-Nom 5 V
Supply Voltage1-Max 35 V
Supply Voltage1-Min 10 V
Supply Voltage1-Nom 15 V
Surface Mount YES
Temperature Grade AUTOMOTIVE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Turn-off Time 0.15 µs
Turn-on Time 0.142 µs
Width 3.9 mm

Alternate Parts for 1EDI60N12AF

This table gives cross-reference parts and alternative options found for 1EDI60N12AF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1EDI60N12AF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
1EDI60N12AFXUMA1 Infineon Technologies AG $1.4870 Half Bridge Based MOSFET Driver, 10A, PDSO8, SOP-8 1EDI60N12AF vs 1EDI60N12AFXUMA1

1EDI60N12AF Related Parts

1EDI60N12AF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the 1EDI60N12AF is -40°C to 150°C.

  • The recommended gate resistor value for the 1EDI60N12AF is between 10 ohms to 100 ohms, depending on the specific application and switching frequency.

  • Yes, the 1EDI60N12AF can be used in a half-bridge configuration, but it requires a separate gate driver for each switch and a bootstrap circuit for the high-side switch.

  • The maximum allowed voltage slew rate for the 1EDI60N12AF is 10 kV/μs, but it's recommended to limit it to 5 kV/μs for reliable operation.

  • Yes, the 1EDI60N12AF is suitable for high-frequency switching applications up to 100 kHz, but the switching frequency should be limited to 50 kHz for optimal performance and reliability.

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