Part Details for 1MBI200S-120 by Fuji Electric Co Ltd
Overview of 1MBI200S-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for 1MBI200S-120
1MBI200S-120 CAD Models
1MBI200S-120 Part Data Attributes
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1MBI200S-120
Fuji Electric Co Ltd
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Datasheet
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1MBI200S-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | FLANGE MOUNT, R-XUFM-X4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | FUJI ELECTRIC | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1300 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 450 ns | |
Turn-on Time-Nom (ton) | 350 ns | |
VCEsat-Max | 2.6 V |
Alternate Parts for 1MBI200S-120
This table gives cross-reference parts and alternative options found for 1MBI200S-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200S-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200S-120 vs MG300N1US1 |
2MBI150NB-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 1MBI200S-120 vs 2MBI150NB-120 |
CM600HA-24H | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | 1MBI200S-120 vs CM600HA-24H |
MG100Q2YS50 | TRANSISTOR IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200S-120 vs MG100Q2YS50 |
MG300Q1US2 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200S-120 vs MG300Q1US2 |
CM150DU-24H | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | 1MBI200S-120 vs CM150DU-24H |
CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | 1MBI200S-120 vs CM150DY-24T |
MG500Q1US1 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200S-120 vs MG500Q1US1 |
MG100Q2YS40 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200S-120 vs MG100Q2YS40 |
2MBI100NC-120 | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | 1MBI200S-120 vs 2MBI100NC-120 |